Fairchild Semiconductor fdp7030l free download

File name fdp7030l.pdf

April 1998 FDP7030L / FDB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 100 A, 30 V. RDS(ON) = 0.007 @ VGS=10 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.010 @ VGS=5 V. high cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated process is especially tailored to minimize on-state resistance. temperature. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency Rugged internal source-drain diode can eliminate the need switching circuits where fast switching, low in-line power for an external Zener diode transient suppressor. loss, and resistance to transients are needed. High density cell design for extremely low RDS(ON). 175